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The CPMF-1200-S160B is a silicon carbide (SiC) N-channel MOSFET from Wolfspeed. It features a 1200V drain-to-source voltage rating and a maximum continuous drain current of 26.1A at case temperature. The device has a typical on-resistance of 0.22 ohms. It is housed in a surface-mountable package designed for high power density and thermal performance.
Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your design requirements. Confirm that the surface-mount package type matches your PCB footprint and thermal pad specifications. Check for any updated reliability data or application notes provided by Wolfspeed for this component.
Select this component for applications requiring high breakdown voltage and efficient switching in space-constrained designs. Consider its thermal characteristics and on-resistance when designing heat dissipation solutions. Ensure gate drive requirements align with the device's specifications for optimal performance.
This part belongs to Wolfspeed's portfolio of silicon carbide power modules and discrete devices. These components are engineered to improve system-level efficiency, reduce size, and lower weight in demanding power electronics applications. They support the transition to more sustainable energy solutions through advanced semiconductor technology.
Consult official Wolfspeed documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' SiC MOSFETs without rigorous electrical and thermal validation. Verify pinout and package dimensions before substitution.
The maximum drain-to-source voltage is 1200V.
Yes, it is available in a surface-mountable package designed for high power density.