CPV363M4F

$17.43

Description：IGBT MODULE 600V 16A 36W IMS-2
Series：-

SKU:9826a0504a52 Category: IGBT Modules Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 600V 16A 36W IMS-2
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：-
IGBT Type：-
Configuration：Three Phase Inverter
Vce(on) (Max) @ Vge, Ic：1.63V @ 15V, 16A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：19-SIP (13 Leads), IMS-2
Supplier Device Package：IMS-2
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：16 A
Power - Max：36 W
Current - Collector Cutoff (Max)：250 µA
Input Capacitance (Cies) @ Vce：1.1 nF @ 30 V

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CPV363M4F

Overview

The CPV363M4F is a six-pack IGBT module with integrated HEXFRED soft ultrafast diodes, housed in an IMS-2 package. It features a collector-to-emitter voltage of 600 V and a continuous collector current of 16 A per IGBT at 25°C case temperature. The maximum power dissipation is 36 W per IGBT at 25°C. The module includes isolation voltage of 2500 V RMS between terminals and the case. Operating junction temperature ranges from -40°C to +150°C.

Feature Summary

Fully isolated printed circuit board mount package
Switching-loss rating includes all tail losses
Optimized for medium operating frequencies

Applications

Motor drive applications
Medium frequency power conversion (1 to 10 kHz)
Space-constrained power electronics designs

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches IMS-2 outline dimensions. Ensure ordering suffixes align with intended thermal and electrical requirements. Request original manufacturer documentation to validate performance parameters before integration into final designs.

Selection Notes

Evaluate thermal management capabilities based on junction-to-case thermal resistance values provided in the datasheet. Consider gate drive requirements matching the specified threshold voltage and total gate charge characteristics. Assess switching loss performance under expected operating frequencies and load currents to ensure efficiency targets are met within safe operating area limits.

Part Context

This component belongs to Vishay's line of insulated metal substrate power modules. These modules combine advanced IGBT technology with optimized materials systems to maximize power throughput while maintaining low thermal resistance. The design supports efficient operation in applications requiring compact form factors and reliable high-power switching performance.