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The CPV364M4F is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay General Semiconductor - Diodes Division. It features a bridge configuration with six elements and built-in diodes, housed in a flange mount package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 27 A. It operates within a temperature range defined by its thermal characteristics and includes isolated case connections for mounting.
This component belongs to the IGBT transistor category, specifically designed for high-power switching applications. It represents a discrete power semiconductor solution offering integrated protection and control features within a single module package.
Direct substitutes include VS-CPV364M4UPBF from Vishay Semiconductors. Verify pin compatibility and thermal requirements when considering alternative packages.