CPV364M4F

CPV364M4F

$30.11
  • Description:IGBT MODULE 600V 27A 63W IMS-2
  • Series:-

SKU:6d5366fd489e Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 27A 63W IMS-2
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:-
  • IGBT Type:-
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:1.6V @ 15V, 27A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:19-SIP (13 Leads), IMS-2
  • Supplier Device Package:IMS-2
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):27 A
  • Power - Max:63 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:2.2 nF @ 30 V

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CPV364M4F

Overview

The CPV364M4F is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay General Semiconductor - Diodes Division. It features a bridge configuration with six elements and built-in diodes, housed in a flange mount package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 27 A. It operates within a temperature range defined by its thermal characteristics and includes isolated case connections for mounting.

Feature Summary

  • Integrated bridge configuration with built-in diodes
  • Isolated flange mount construction
  • Ultra-fast soft recovery characteristics

Applications

  • Industrial motor drives
  • Power inversion systems
  • High-frequency switching applications

Part Context

This component belongs to the IGBT transistor category, specifically designed for high-power switching applications. It represents a discrete power semiconductor solution offering integrated protection and control features within a single module package.

Replacement Considerations

Direct substitutes include VS-CPV364M4UPBF from Vishay Semiconductors. Verify pin compatibility and thermal requirements when considering alternative packages.

CPV364M4FCPV364M4F
$30.11
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