CSD106ANPSA1

Overview

The CSD106ANPSA1 is a N-channel Power MOSFET from Infineon's OptiMOS™ PS+ family, designed for high-efficiency power switching applications. It features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 106 A at 25°C. The device offers a maximum on-resistance (RDS(on)) of 4.3 mΩ at VGS = 10 V, ensuring low conduction losses. Packaged in the compact PG-TO263-3-18 DirectFET® format, it integrates an exposed thermal pad for superior heat dissipation. Operating within a temperature range of -55°C to 175°C, this component supports robust performance in automotive and industrial environments.

Feature Summary

• DirectFET® technology provides enhanced thermal conductivity through direct die attachment to the PCB.
• Optimized gate charge characteristics facilitate efficient switching with standard drivers.
• Low on-resistance minimizes power dissipation during conduction phases.
• Robust avalanche energy rating ensures reliability under transient overload conditions.

Applications

• Automotive DC-DC converters
• Motor control systems
• Industrial power supplies

Procurement Notes

Verify the specific suffix 'PSA1' against the official datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with the intended PCB footprint for the PG-TO263-3-18 DirectFET® package. Check for RoHS compliance status as per the latest product qualification report. Confirm availability lead times directly with authorized distributors or Infineon sales representatives prior to ordering.

Selection Notes

Select this component when high current handling and efficient thermal management are critical. The 60 V rating suits low-voltage automotive and industrial bus architectures. Compare RDS(on) values against alternative packages to evaluate trade-offs between size and thermal resistance. Ensure the gate drive voltage aligns with the optimal region for minimum on-resistance. Consider the DirectFET® mounting requirements for proper heatsinking integration.

Part Context

This part belongs to Infineon's OptiMOS™ PS+ series, which utilizes advanced trench gate and planar body-diode technologies. The DirectFET® packaging distinguishes it by eliminating wire bonds and using a large copper tab for thermal transfer. This family targets applications requiring high efficiency and compact form factors in demanding thermal environments.

Replacement Considerations

Cross-reference with other 60 V, ~100 A DirectFET® devices from the same manufacturer. Verify pinout compatibility and thermal resistance parameters before substituting. Ensure equivalent avalanche ratings and gate threshold voltages to maintain circuit stability.