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Product Detailed Parameters
- Description：MOSFET N-CH 12V 22A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.3mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：997 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD13202Q2 is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 12 V drain-source voltage rating and a maximum continuous drain current of 14.4 A. The device exhibits a low on-resistance of 9.3 mΩ at room temperature. Key electrical characteristics include a gate charge of 5.1 nC, a threshold voltage of 580 mV, and a power dissipation capability of 2.7 W. The component operates within a temperature range of -55 °C to +150 °C and utilizes a WSON-6 surface-mount package.
Feature Summary
- NexFET technology designed for high efficiency and fast switching performance
- Low on-resistance optimized for minimal conduction losses
- Enhancement mode operation with low gate charge for efficient drive requirements
Applications
- DC-DC converter output stages
- Power management integrated circuits (PMICs)
- Load switch applications in portable devices
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead time availability directly with authorized distributors or Texas Instruments sales representatives prior to procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines specified in the product documentation.
Selection Notes
Select this component when a low-voltage, high-current solution is required for space-constrained designs. The WSON-6 package offers a compact footprint suitable for dense PCB layouts. Consider the 12 V rating and 9.3 mΩ resistance for applications prioritizing efficiency over higher voltage tolerance. Evaluate thermal management needs based on the 2.7 W power dissipation limit in the selected operating environment.
Part Context
This part belongs to the CSD13202 series of NexFET Power MOSFETs from Texas Instruments. The series focuses on delivering high performance in small packages for modern power management applications. The Q2 suffix typically denotes specific manufacturing lot or packaging variations within the standard CSD13202 family, requiring verification against the latest TI documentation for precise physical attributes.
Replacement Considerations
Consult the Texas Instruments website for officially listed alternative parts within the NexFET portfolio. Verify that any substitute matches the 12 V rating, N-channel configuration, and WSON-6 package dimensions. Cross-reference pinouts and electrical parameters such as Rds(on) and Qg to ensure functional compatibility in the existing circuit design.
