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Product Detailed Parameters
- Description：MOSFET N-CH 12V 1.6A 4DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：17.1mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：862 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-DSBGA (1x1)
- Package / Case：4-UFBGA, DSBGA
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Overview
The CSD13302W is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a DSBGA-4 surface-mount package. The device features a drain-source breakdown voltage of 12 V and supports a continuous drain current of 1.6 A. Key electrical parameters include a maximum on-resistance of 17.1 mOhms, a gate-source voltage range of -10 V to 10 V, and a threshold voltage of 700 mV. The total gate charge is 7.8 nC, with rise and fall times of 7 ns each. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.8 W.
Feature Summary
- NexFET technology enables ultra-low resistance for improved efficiency.
- Enhancement mode N-channel configuration provides reliable switching control.
- DSBGA-4 package design facilitates compact surface-mount integration.
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific suffix against official documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the DSBGA-4 footprint matches your PCB layout constraints before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage, high-efficiency switch is required in space-constrained designs. The low gate charge and fast switching speeds make it suitable for high-frequency operation. Verify that the 12 V rating aligns with your system's supply voltage headroom and transient conditions.
Part Context
This part belongs to the CSD13302W series of NexFET power MOSFETs from Texas Instruments. These devices are engineered for high-performance power management applications requiring small footprints and efficient thermal handling. The series represents a focus on minimizing conduction losses in modern electronic systems.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.
