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Product Detailed Parameters
- Description：MOSFET N-CH 12V 3.6A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：76mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：156 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD13380F3 is a 12-V N-Channel FemtoFET MOSFET manufactured by Texas Instruments. It utilizes silicon technology and operates in enhancement mode within a PICOSTAR-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 12 V, a continuous drain current of 4.3 A at 25°C, and a maximum on-resistance of 19 mΩ at 4.5 V gate drive. The device features a gate charge of 5 nC and supports an operating temperature range from -55°C to +150°C.
Feature Summary
- NexFET power MOSFET technology optimized for low gate charge and fast switching performance.
- Ultra-small PICOSTAR-3 package designed for high-density surface-mount applications.
- Enhancement-mode operation with low threshold voltage for efficient logic-level driving.
Applications
- DC-DC converter output stages
- Low-voltage load switches
- Power management circuits in portable devices
Procurement Notes
Verify the specific suffix F3 against the official Texas Instruments datasheet to confirm pinout and thermal characteristics. Ensure the ordering part number matches the required tape-and-reel or cut-tape configuration. Cross-reference the manufacturer date code and lot traceability requirements with your supply chain standards before finalizing procurement orders.
Selection Notes
Select this component when a 12-V rating and compact footprint are critical constraints. Compare the 19 mΩ on-resistance against system efficiency targets at the expected load current. Confirm that the 5 nC gate charge aligns with the driver capability of the control circuitry to ensure adequate switching speeds without excessive losses.
Part Context
This device belongs to the FemtoFET family from Texas Instruments, which focuses on miniaturization and efficiency for low-voltage applications. It shares the PICOSTAR-3 package form factor with other members of the CSD1338x series, offering a standardized solution for space-constrained power designs requiring N-channel switching capabilities.
Replacement Considerations
Consult the Texas Instruments FemtoFET selection guide for direct substitutes within the CSD1338x series. Verify compatibility with alternative packages such as SOT-353 if pinout differences exist. Ensure any replacement maintains the 12-V rating and comparable Rds(on) specifications.
