ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 12V 2.1A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：180mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
Download product information
Overview
The CSD13381F4T is a single N-channel enhancement-mode MOSFET from the Texas Instruments FemtoFET series. It utilizes silicon technology and features a PICOSTAR-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 12 V, a continuous drain current (Id) of 2.1 A, and a maximum on-resistance (Rds(on)) of 400 mΩ. The device operates with a gate-source voltage range of -8 V to +8 V and has a typical gate charge (Qg) of 1.06 nC at 4.5 V. It supports a power dissipation of 500 mW and functions within a temperature range of -55°C to +150°C.
Feature Summary
- Single N-channel configuration for compact circuit integration
- Enhancement mode operation optimized for low-voltage switching
- PICOSTAR-3 package design for space-constrained applications
Applications
- Low-voltage DC-DC converter circuits
- Battery protection modules
- Load switching in portable devices
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets. Ensure the component matches the exact part number CSD13381F4T to guarantee correct electrical characteristics and package dimensions.
Selection Notes
Select this component for designs requiring a 12 V rated N-channel switch with moderate current handling capabilities. The low gate charge facilitates efficient driving in low-power control systems. Consider the 400 mΩ on-resistance for thermal management calculations in high-duty-cycle applications.
Part Context
This part belongs to the FemtoFET family, which focuses on ultra-small footprints for mobile and consumer electronics. It complements other variants like CSD23381F4T (P-channel) within the same 12 V platform, offering matched performance characteristics for complementary metal-oxide-semiconductor (CMOS) compatible interfaces.
Replacement Considerations
Direct substitutes may include CSD13381F4 (same device, different packaging). Verify pinout compatibility and electrical ratings before replacing with other 12 V N-channel MOSFETs in the PICOSTAR-3 package.
