CSD13383F4

Overview

The CSD13383F4 is a silicon N-channel enhancement-mode MOSFET from the FemtoFET series. It features a maximum drain-source voltage of 12 V and a continuous drain current of 2.9 A. The device has a typical on-resistance of 65 mΩ and a gate charge of 2 nC at 0 V. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation of 500 mW. The component is housed in a 3-pin PICOSTAR surface-mount package measuring 1.04 mm by 0.64 mm.

Feature Summary

• Ultra-small footprint design for high-density PCB layouts
• Low on-resistance for efficient power handling
• Fast switching characteristics suitable for high-frequency applications

Applications

• Portable consumer electronics
• Battery-powered devices
• DC-DC converters

Procurement Notes

Verify the specific suffix (e.g., T) for tape-and-reel packaging requirements against the official datasheet. Confirm RoHS compliance status through manufacturer documentation. Ensure the ordering part number matches the exact electrical parameters required for the target circuit design.

Selection Notes

Select this component when space constraints are critical due to its miniature package size. Consider the 12 V rating and 2.9 A current capability for low-voltage power management tasks. Evaluate thermal performance based on the 500 mW dissipation limit in the final assembly environment.

Part Context

This part belongs to Texas Instruments' FemtoFET family, which focuses on miniaturization without sacrificing performance. It complements other variants like the CSD13381F4T and CSD13385F5T, offering different current and resistance profiles within the same compact form factor for flexible system design.

Replacement Considerations

Direct substitutes include CSD13381F4T and CSD13385F5T. Verify pin compatibility and electrical parameter alignment before substitution.