CSD13385F5

Overview

The CSD13385F5 is a single N-channel silicon power MOSFET from the FemtoFET series, manufactured by Texas Instruments. It features a 12 V drain-source voltage rating and a continuous drain current of 4.3 A at ambient temperature. The device exhibits a maximum on-resistance of 19 mΩ at 4.5 V gate drive. Key electrical parameters include a gate charge of 5 nC and an input capacitance of 674 pF. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 500 mW.

Feature Summary

• Ultra-low gate charge for efficient switching performance
• Low on-resistance optimized for minimal conduction losses
• Enhanced thermal stability across wide operating temperatures

Applications

• Portable consumer electronics battery management
• DC-DC converter output stages
• Low-voltage load switching circuits

Procurement Notes

Verify the specific suffix F5 against the manufacturer datasheet to confirm package dimensions and tape-and-reel specifications. Ensure compatibility with RoHS3 standards and check moisture sensitivity level requirements for surface-mount assembly processes before procurement.

Selection Notes

Select this component for applications requiring low voltage operation and compact footprint. Compare gate charge and on-resistance against alternative devices in the same voltage class to optimize switching efficiency and thermal management in space-constrained designs.

Part Context

This part belongs to the FemtoFET family, designed for high-efficiency power management in small form factors. It utilizes advanced silicon technology to minimize parasitic effects while maintaining robust performance in low-voltage environments typical of modern portable devices.

Replacement Considerations

Consult official substitution guides for equivalent parts within the CSD13385 series or other NexFET families with matching voltage and current ratings.