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Product Detailed Parameters
- Description：MOSFET N-CH 25V 31A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 8V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16321Q5 is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a maximum drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 97 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.9 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate charge (Qg) of 6.8 nC at Vgs = 4.5 V, an input capacitance (Ciss) of 10,000 pF at Vds = 15 V, and a threshold voltage (Vgs(th)) ranging from 0.9 V to 1.4 V. The component operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 3.1 W.
Feature Summary
- NexFET technology designed for low conduction losses
- Enhanced switching performance with low gate charge
- Robust thermal management via PowerTDFN package
Applications
- DC-DC converter modules
- Load switch applications
- Power management integrated circuits (PMICs)
Procurement Notes
Verify the specific ordering suffix and packaging configuration against the manufacturer's latest datasheet before procurement. Confirm that the requested quantity aligns with standard reel or cut-tape availability. Ensure compliance with RoHS and REACH directives as specified in the official documentation. Cross-reference the manufacturer part number with distributor codes to prevent substitution errors during purchasing.
Selection Notes
Select this component for applications requiring high current handling in compact form factors. The low Rds(on) minimizes conduction losses in synchronous rectification topologies. Evaluate thermal requirements based on the 3.1 W power dissipation limit and the thermal resistance characteristics of the 8-VSON-CLIP package. Ensure gate drive voltages remain within the specified limits to maintain optimal switching efficiency.
Part Context
This device belongs to the NexFET family of silicon power MOSFETs from Texas Instruments. The series focuses on optimizing the trade-off between on-resistance and gate charge for efficient power conversion. The CSD16321Q5 utilizes a surface-mount PowerTDFN package to provide enhanced thermal performance compared to traditional leaded packages, suitable for space-constrained designs.
Replacement Considerations
Direct replacements must match the 25 V rating, N-channel configuration, and similar Rds(on) specifications. Verify pinout compatibility and thermal pad connectivity when substituting with other manufacturers' devices. Check if alternative packages require PCB layout modifications.
