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Product Detailed Parameters
- Description：MOSFET N-CH 25V 21A/97A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1365 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16322Q5 is an N-channel enhancement mode power MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 25 V and a continuous drain current of 97 A. The device utilizes an 8-pin SON surface-mount package with dimensions of 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height. Key electrical parameters include a maximum on-resistance of 7.2 mΩ, a gate threshold voltage range of 0.9 V to 1.4 V, and a typical gate charge of 6.8 nC at 4.5 V. It supports a maximum power dissipation of 3.1 W and operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- NexFET technology for optimized power performance
- Enhanced mode N-channel configuration
- Surface-mount SON packaging for compact integration
Applications
- Power management systems
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the specific datasheet revision, as TI updated documentation in October 2023. Confirm package details against the official specification sheet to ensure compatibility with design constraints. Check for any associated variants like CSD16322Q5.B or CSD16322Q5C if dual-cool features are required. Ensure compliance with RoHS standards during sourcing.
Selection Notes
Select this component for low-voltage, high-current applications requiring efficient switching. The 25 V rating suits 12 V or 24 V systems. Consider the 7.2 mΩ on-resistance for thermal management needs. The 8-pin SON package offers a balance between current handling and board space efficiency compared to larger packages.
Part Context
This part belongs to the NexFET family, designed for high-efficiency power switching. It is manufactured by Texas Instruments, a leader in analog and embedded processing technologies. The component is widely used in industrial and consumer electronics where reliable power conversion is critical.
Replacement Considerations
Check for CSD16322Q5.B or CSD16322Q5C if alternative thermal or structural features are needed. Verify pinout and electrical specs against similar NexFET parts before substitution.
