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Product Detailed Parameters
- Description：MOSFET N-CH 25V 21A/81A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.5 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：1220 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16404Q5A is a single N-channel Power MOSFET from Texas Instruments' NexFET family, housed in an 8-VSONP (5x6) surface-mount package. It features a drain-source voltage rating of 25V and a continuous drain current capacity of 21A at ambient temperature or 81A at case temperature. The device exhibits a maximum on-resistance of 5.1 milliohms when driven at 10V with a 20A load. Key electrical characteristics include a gate charge of 8.5 nC at 4.5V and an input capacitance of 1220 pF at 12.5V. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 3W.
Feature Summary
- Utilizes NexFET technology for optimized switching performance and low conduction losses.
- Features a compact 8-VSONP surface-mount package designed for efficient thermal management.
- Provides high current handling capability suitable for dense power stages.
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Low-voltage power distribution systems
Procurement Notes
Verify the specific ordering suffix to confirm the exact packaging configuration, such as tape and reel or cut tape, prior to procurement. Ensure that the component's lead-free status and RoHS compliance align with your manufacturing requirements. Cross-reference the manufacturer part number against official distributor catalogs to validate authenticity and current production status before finalizing orders.
Selection Notes
Select this component for applications requiring a 25V breakdown voltage with significant current demands. The low on-resistance minimizes heat generation during high-load operations. Consider the 8-VSONP package dimensions for PCB layout constraints. Evaluate the gate charge specifications against your driver capabilities to ensure optimal switching speeds without excessive drive current requirements.
Part Context
This component belongs to the CSD16404 series of single N-channel MOSFETs manufactured by Texas Instruments. It is part of the broader NexFET portfolio, which focuses on enhancing efficiency in power conversion designs. The Q5A suffix typically denotes specific packaging and environmental compliance attributes defined by the manufacturer for this particular variant.
Replacement Considerations
Consult official Texas Instruments documentation for verified cross-references. Direct substitutes must match the 25V rating, N-channel configuration, and compatible package footprint. Verify that any alternative device meets or exceeds the required current and thermal specifications.
