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Product Detailed Parameters
- Description：MOSFET N-CH 25V 19A/60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD16406Q3 is an N-channel enhancement-mode MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 25 V and a continuous drain current of 79 A. The device utilizes an 8-pin SON surface-mount package with dimensions of 3.4 mm x 3.4 mm x 1.1 mm. Key electrical parameters include a maximum on-resistance of 7.4 mΩ, a gate threshold voltage range of 1.4 V to 2.2 V, and a typical gate charge of 5.8 nC at 4.5 V. It supports a maximum power dissipation of 46 W and operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Low on-resistance optimized for minimal conduction losses
- Enhanced thermal performance via clip bond die attach in compact SON package
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Power management modules
Procurement Notes
Verify the specific suffix Q3 against official Texas Instruments documentation to confirm pinout and electrical characteristics match design requirements. Ensure the ordering part number corresponds to the correct tape-and-reel or cut-tape configuration as specified in the manufacturer's catalog. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.
Selection Notes
Select this component based on its 25 V rating and 79 A current capability relative to system load requirements. Evaluate the 7.4 mΩ Rds(on) for thermal management efficiency in space-constrained designs. Confirm compatibility with standard gate drive voltages given the 1.4 V to 2.2 V threshold range. Assess the 8-pin SON footprint against available PCB real estate constraints.
Part Context
This device belongs to the NexFET family of power MOSFETs, characterized by advanced silicon process technologies aimed at reducing figure-of-merit metrics. The CSD16406Q3 specifically targets low-voltage, high-current applications requiring efficient heat dissipation through its specialized package construction.
Replacement Considerations
Consult official substitution guides for equivalent NexFET devices with matching voltage and current ratings. Verify pin-to-pin compatibility and thermal resistance values when considering alternative part numbers from the same manufacturer.
