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Product Detailed Parameters
- Description：MOSFET N-CH 25V 31A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：2660 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16407Q5C is a DualCool NexFET N-Channel Power MOSFET designed for high-efficiency power conversion. It features an ultralow gate charge (Qg = 13.3 nC at VGS = 4.5V) and optimized on-state resistance (RDS(on) = 2.5 mΩ at VGS = 4.5V, ID = 25A). The device supports a drain-to-source voltage of 25V and continuous drain current up to 31A. Packaged in a compact 5mm × 6mm SON format, it includes avalanche rating capabilities.
Feature Summary
- DualCool package architecture enabling optimized two-sided cooling for enhanced thermal performance
- Ultralow gate charge characteristics minimizing switching losses in synchronous applications
- Avalanche rated capability providing robustness against unclamped inductive switching events
Applications
- Point-of-load synchronous buck converters
- Networking system power supplies
- Telecom infrastructure power stages
- Computing system power distribution
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity and reel specifications. Confirm that the active status aligns with current design requirements. Ensure compliance with RoHS and halogen-free material standards as documented in the manufacturer's product folder before finalizing procurement orders.
Selection Notes
Select this component when low gate charge is critical for reducing driver losses in high-frequency switching environments. The DualCool package is suitable for designs requiring efficient heat dissipation through both top and bottom surfaces. Evaluate the 25V breakdown voltage against peak transient loads to ensure adequate safety margins during operation.
Part Context
This device belongs to Texas Instruments' NexFET family, which focuses on minimizing conduction and switching losses. The DualCool technology distinguishes it by offering superior thermal management compared to standard packages. It serves as a specialized solution for modern point-of-load architectures demanding high power density.
Replacement Considerations
Direct replacements must match the 25V rating, 8-pin SON footprint, and similar RDS(on) values. Verify that alternative components support the same DualCool thermal interface or provide equivalent junction-to-case thermal resistance metrics.
