CSD16409Q3

$0.79

Description：MOSFET N-CH 25V 15A/60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c5b72587b6be Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 25V 15A/60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
Vgs (Max)：+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 12.5 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (5x6)
Package / Case：8-PowerTDFN

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CSD16409Q3

Overview

The CSD16409Q3 is a 25-V N-channel NexFET power MOSFET in an 8-VSON package. It features a typical Rds(on) of 12.4 mΩ at Vgs=10V and ID=17A, or 8.2 mΩ under specific test conditions. The device supports continuous drain currents of 15A (Ta) and 60A (Tc), with a maximum power dissipation of 2.6W at ambient temperature. Operating junction temperature ranges from -55°C to 150°C. Input capacitance is typically 800 pF at Vds=12.5V.

Feature Summary

Ultra-low gate charge and reverse transfer capacitance for efficient switching
Low thermal resistance for effective heat dissipation
Rated for avalanche energy handling
Lead-free terminal plating compliant with RoHS and halogen-free standards

Applications

Point-of-load synchronous buck converters
DC-DC converter modules
Power management circuits requiring low conduction losses

Procurement Notes

Verify the exact datasheet revision and ordering suffix when sourcing. Confirm that the component matches the specified 25-V rating and 8-VSON package dimensions. Ensure compliance with environmental directives such as RoHS and halogen-free requirements. Cross-reference part numbers with official Texas Instruments documentation to avoid counterfeit or obsolete stock.

Selection Notes

Select this component for applications prioritizing low conduction loss due to its low on-resistance. Consider the thermal performance and avalanche rating for robust operation. Evaluate gate charge specifications for high-frequency switching efficiency. Ensure the voltage and current ratings exceed circuit demands with appropriate safety margins.

Part Context

This device belongs to Texas Instruments' NexFET family of power MOSFETs. These components are designed for high-efficiency power conversion. The CSD16409Q3 specifically targets low-voltage, high-current applications. It integrates advanced silicon technology to minimize switching and conduction losses.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacement.