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Product Detailed Parameters
- Description：MOSFET N-CH 25V 16A/59A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16410Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an 8-pin VSONP-EP package with dimensions of 5x6 mm. The device supports a drain-source voltage (Vds) of 25 V and a continuous drain current (Id) of 59 A at case temperature or 16 A at ambient temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 3.3 mΩ at Vgs = 10 V, a gate charge (Qg) of 10 nC at Vgs = 4.5 V, and a threshold voltage (Vgs(th)) ranging from 1.2 V to 2 V. Operating temperatures span from -55°C to +150°C junction temperature.
Feature Summary
- NexFET technology enables low gate charge for efficient switching performance
- Low on-resistance minimizes conduction losses in power applications
- Enhanced thermal performance via exposed pad design for effective heat dissipation
Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Synchronous rectification stages
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the component meets RoHS and REACH compliance requirements as stated in the official documentation. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during assembly.
Selection Notes
Select this component when a low-voltage, high-current solution is required for space-constrained designs. The 8-pin VSONP-EP package offers a compact footprint suitable for dense PCB layouts. Consider the trade-off between the 3.3 mΩ on-resistance and the 10 nC gate charge for optimal efficiency in high-frequency switching applications compared to higher resistance alternatives.
Part Context
This part belongs to the CSD1641xQ5 series of N-channel NexFET power MOSFETs. The series is characterized by advanced silicon process technology designed to reduce both conduction and switching losses. These devices are engineered for use in low-voltage power conversion systems where high efficiency and small form factors are critical design constraints.
Replacement Considerations
Direct substitutes within the same family include CSD16410Q5. Other variants such as CSD16414Q5 or CSD16415Q5 offer different on-resistance values but share similar packaging and voltage ratings. Verify pin compatibility and thermal characteristics when cross-referencing with other manufacturers' equivalents.
