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Product Detailed Parameters
- Description：MOSFET N-CH 25V 24A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.7 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16413Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VDS of 25V and an RDS(on) of 4.1 mΩ at VGS = 10V. The device supports a continuous drain current (Id) of 100A at case temperature and has a gate charge (Qg) of 9 nC. It operates within a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 3.1W at ambient conditions. The component utilizes a VSONP-8 surface-mount package.
Feature Summary
- NexFET technology for optimized switching performance
- Low on-resistance for high efficiency
- Enhanced thermal stability
Applications
- DC-DC converters
- Power management systems
- Load switches
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Texas Instruments official documentation before procurement. Confirm that the VSONP-8 package dimensions and pinout match your PCB footprint requirements. Ensure compliance with RoHS and REACH regulations as specified in the manufacturer's environmental declarations for this part number.
Selection Notes
Select this component when a low-voltage, high-current solution is required in a compact form factor. The 25V rating suits applications with lower voltage rails. Consider the 4.1 mΩ on-resistance for minimizing conduction losses. Verify that the 9 nC gate charge aligns with your driver capabilities for efficient switching transitions.
Part Context
This part belongs to the CSD16xxx series of NexFET power MOSFETs from Texas Instruments. These devices are designed for general-purpose power switching applications requiring high reliability and low loss. The Q5A suffix indicates the specific tape and reel packaging configuration used for automated assembly processes.
Replacement Considerations
Consult Texas Instruments official substitution guides for verified alternatives. Cross-reference parameters such as VDS, RDS(on), and package type when evaluating potential substitutes.
