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Product Detailed Parameters
- Description：MOSFET N-CH 25V 34A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：34A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：3650 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16414Q5 is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 25V drain-source voltage rating and an 8-VSON-CLIP (5x6) package. The device supports a continuous drain current of 34A at ambient temperature and 100A at case temperature. Key electrical parameters include a maximum gate charge of 21nC at 4.5V, a threshold voltage of 2V at 250µA, and an input capacitance of 3650pF at 12.5V. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Utilizes NexFET technology for enhanced switching performance
- Incorporates a VSON-CLIP package design for improved thermal dissipation
- Provides low gate charge characteristics for efficient drive requirements
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level prior to integration into production workflows. Cross-reference datasheet revisions to validate parameter consistency with current manufacturing standards.
Selection Notes
Select this component based on its 25V voltage rating and high current handling capabilities in compact form factors. Evaluate thermal resistance requirements against the specified power dissipation limits. Ensure gate drive voltages align with the specified threshold and charge specifications for optimal switching efficiency.
Part Context
This part belongs to the CSD16414 series from Texas Instruments, designed for low-voltage power switching applications. It represents a segment of the company's NexFET portfolio, focusing on high-efficiency solutions for modern electronic systems requiring robust performance in small surface-mount packages.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal characteristics before implementing any cross-references.
