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Product Detailed Parameters
- Description：MOSFET N-CH 25V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.15mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：4100 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16415Q5T is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-VSON-CLIP package for surface mount installation. The device features a drain-source breakdown voltage of 25 V and a continuous drain current rating of 100 A. Its on-resistance is specified at 1.5 mOhms, with a gate-source voltage range of -16 V to 16 V. The threshold voltage is 1.2 V, and the total gate charge is 21 nC. Power dissipation reaches 156 W, operating within a temperature range of -55°C to +150°C.
Feature Summary
- NexFET technology enables low on-resistance and fast switching performance
- VSON-CLIP package provides enhanced thermal dissipation capabilities
- Single channel configuration supports compact circuit designs
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific suffix T indicates tape and reel packaging when sourcing. Confirm RoHS compliance status through official datasheets before integration. Ensure the 8-VSON-CLIP footprint matches PCB layout requirements. Check for REACH SVHC declarations to meet regulatory standards. Validate that the 25 V rating aligns with system voltage constraints.
Selection Notes
Select this component for applications requiring high current handling in a small form factor. The 1.5 mOhm resistance minimizes conduction losses. Consider the 21 nC gate charge for driver capability assessment. The wide operating temperature range suits harsh environments. Compare against similar NexFET devices for optimal cost-performance balance.
Part Context
This part belongs to the CSD16415Q5 series from Texas Instruments. It is designed as a replacement for older MOSFET technologies. The NexFET brand signifies advanced silicon performance. The VSON-CLIP package offers superior thermal conductivity compared to standard packages. It targets efficiency improvements in power conversion stages.
Replacement Considerations
The CSD16415Q5 is a non-suffix variant of the same series. Verify pin compatibility and thermal characteristics when substituting. Ensure the absence of the 'T' suffix does not alter packaging or handling requirements.
