CSD16570Q5B

Overview

The CSD16570Q5B is a 25-V N-channel NexFET power MOSFET in an 8-VSON (5x6 mm) package. It features a typical on-resistance of 0.82 mΩ and a maximum of 0.59 mΩ at 10 V gate drive. The device supports a continuous drain current of 100 A at ambient temperature, with power dissipation ratings of 3.2 W (Ta) and 195 W (Tc). Key electrical parameters include a gate charge of 250 nC at 10 V and an input capacitance of 14,000 pF at 12 V. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Extremely low on-resistance for high efficiency
• Low gate charge and reverse transfer capacitance
• Avalanche rated capability
• Low thermal resistance design

Applications

• DC-DC converter modules
• Power distribution networks
• Point-of-load applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging format, such as tape and reel or cut tape, as indicated in official Texas Instruments documentation. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high current handling in compact footprints. Evaluate thermal management needs based on the specified power dissipation limits. Ensure gate drive voltage compatibility with the 4.5 V and 10 V thresholds for optimal Rds(on) performance.

Part Context

This part belongs to the NexFET family from Texas Instruments, designed for power management solutions. It is categorized under single FETs and MOSFTs within the broader semiconductor portfolio, targeting efficient switching applications in modern electronic systems.

Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout and electrical characteristics match before replacing.