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Product Detailed Parameters
- Description：MOSFET N-CH 30V 32A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：32A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 8V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：3420 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17303Q5 is a single N-channel enhancement mode power MOSFET from the Texas Instruments NexFET series. It features a maximum drain-source voltage of 30 V and a continuous drain current of 68 A at case temperature. The device utilizes an 8-pin PowerTDFN package with dimensions of 5 mm by 6 mm. Key electrical parameters include a maximum on-resistance of 4.2 mΩ at Vgs = 10 V and a typical gate charge of 14 nC at Vgs = 4.5 V. The component operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Utilizes NexFET technology for optimized low on-resistance and fast switching performance.
- Designed for surface-mount assembly in compact power management applications.
- Enhanced channel configuration supports high-current switching requirements.
Applications
- DC-DC converter output stages
- Power distribution networks
- Load switch circuits
Procurement Notes
Verify the specific suffix against the manufacturer datasheet to confirm pinout and thermal characteristics. Ensure the ordering part number matches the required package variant. Confirm RoHS compliance status through official documentation before integration into production designs.
Selection Notes
Select this component when a 30 V rating and low Rds(on) are required for efficient power conversion. Compare gate charge specifications against driver capabilities to ensure adequate switching speed. Evaluate thermal resistance values relative to the PCB copper area available for heat dissipation.
Part Context
This device belongs to the CSD1730x family of NexFET power MOSFETs. These components are engineered for high-efficiency power management solutions. The family shares common packaging standards while varying in current handling and resistance specifications to suit diverse voltage levels.
Replacement Considerations
Compatible substitutes include CSD17301Q5A, CSD17306Q5A, and CSD17308Q5A. Verify that replacement parts maintain identical pin configurations and meet or exceed the original voltage and current ratings.
