ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 14A/44A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：10.3mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta), 28W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD17308Q3T is an N-channel enhancement mode MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 30 V and a continuous drain current of 47 A at case temperature, or 14 A at ambient temperature. The device utilizes an 8-pin PowerTDFN (SON) package with dimensions of 3.3x3.3 mm. Key electrical parameters include a maximum on-resistance of 16.5 mΩ and a typical gate charge of 3.9 nC at 4.5 V. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Enhanced switching performance through low gate charge characteristics for efficient drive requirements.
- High thermal efficiency enabled by advanced silicon technology and optimized package design.
- Robust avalanche capability designed to withstand transient energy events in inductive loads.
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Motor control applications
Procurement Notes
Verify the specific suffix 'T' indicates tape and reel packaging when sourcing components. Confirm that the part number matches the exact NexFET generation required for your design. Ensure the supplier provides original manufacturer documentation to validate authenticity. Check for any specific handling precautions related to the small outline no-lead package during assembly.
Selection Notes
Select this component for designs requiring high current density in a compact footprint. The 30 V rating suits low-voltage power systems. Evaluate the thermal resistance values against your heat dissipation strategy. Consider the gate charge specifications relative to your driver capabilities to optimize switching losses.
Part Context
This device belongs to the NexFET family, which focuses on improving power conversion efficiency. The Q3 designation typically refers to a specific generation of silicon technology offering improved figure-of-merit compared to previous iterations. It is designed for surface-mount assembly to support automated manufacturing processes.
Replacement Considerations
Consult official substitution guides for compatible NexFET devices with similar voltage and current ratings. Verify pinout compatibility before replacing existing components. Ensure thermal and electrical characteristics meet or exceed original design specifications.
