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Product Detailed Parameters
- Description：MOSFET N-CH 30V 20A/60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 18A, 8V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1440 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD17309Q3 is a 30-V N-channel NexFET power MOSFET from Texas Instruments. It features an 8-VSON-CLIP package with dimensions of 3.3x3.3 mm. The device supports a continuous drain current of 20 A at ambient temperature and 60 A at case temperature (25°C). Its maximum on-resistance is 4.2 mΩ. Power dissipation is rated at 2.8 W at ambient temperature. The operating junction temperature range spans from -55°C to 150°C.
Feature Summary
- Utilizes NexFET technology for enhanced power efficiency
- Integrated Clip structure for superior thermal performance
- Compact 8-VSON surface-mount footprint
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific revision status, such as Rev B, against project requirements. Confirm that the 8-VSON-CLIP package matches the PCB land pattern design. Ensure electrostatic discharge precautions are implemented during handling due to limited built-in ESD protection. Validate component authenticity through authorized supply chains.
Selection Notes
Select this component when low on-resistance and high current capability are required in a small form factor. The 30-V rating suits low-voltage systems. Consider the thermal resistance characteristics for heat dissipation needs. Evaluate the 2.8 W power dissipation limit under actual operating conditions to ensure reliability within the specified temperature range.
Part Context
This part belongs to Texas Instruments' NexFET family of single N-channel MOSFETs. It is designed for high-efficiency power management applications. The VSON-CLIP package distinguishes it from standard VSON variants by offering improved thermal conductivity. It serves as a discrete solution for modern compact electronic designs requiring robust switching performance.
Replacement Considerations
Check for direct substitutes within the same NexFET series or compatible packages. Verify pinout compatibility and electrical parameters before substitution. Ensure any alternative maintains the 30-V voltage rating and similar current capabilities.
