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Product Detailed Parameters
- Description：MOSFET N-CH 30V 21A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：5.1mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1560 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17310Q5A is a 30-V N-channel NexFET power MOSFET in an 8-pin SON package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 100 A at case temperature. The device has a typical on-resistance of 3.9 mΩ and a gate charge of 11.8 nC at 4.5 V. Operating temperatures range from -55 °C to +150 °C junction temperature, with a maximum power dissipation of 3.2 W.
Feature Summary
- NexFET technology for enhanced switching performance
- Low on-resistance for efficient power handling
- Surface-mount SON package for compact designs
Applications
- DC-DC converter output stages
- Power management circuits
- Load switch applications
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Texas Instruments or authorized distributors. Confirm package markings and electrical parameters match design requirements before procurement. Ensure compliance with RoHS and REACH regulations as specified in the official documentation.
Selection Notes
Select this component for applications requiring low Rds(on) and high current capability in a small footprint. Consider thermal management due to the 3.2 W power dissipation limit. Verify gate drive compatibility with the 4.5 V gate charge specification for optimal switching efficiency.
Part Context
Part of the Texas Instruments NexFET family, designed for high-efficiency power conversion. The CSD17310Q5A offers improved performance over previous generations with lower on-resistance and gate charge, suitable for modern power supply designs.
Replacement Considerations
Check for direct pin-compatible alternatives within the CSD173xx series. Verify that substitute parts meet or exceed the 30 V rating, 100 A current capacity, and 3.9 mΩ on-resistance specifications.
