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Product Detailed Parameters
- Description：MOSFET N-CH 30V 38A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：38A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：1.5mOhm @ 35A, 8V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：5240 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17312Q5 is a 30V N-Channel NexFET Power MOSFET designed for power conversion applications. It features an ultra-low gate charge and optimized performance for 5V gate drive systems. The device utilizes a SON 5mm x 6mm plastic package with 8 pins, supporting surface mount installation. Key electrical parameters include a maximum continuous drain current of 100A at case temperature and a pulsed drain current of 200A. The on-resistance (Rds(on)) ranges from 1.2mΩ to 1.8mΩ depending on the gate-source voltage. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Optimized for 5V gate drive applications to minimize switching losses
- Ultra-low total gate charge and gate-to-drain charge characteristics
- Low thermal resistance structure for efficient heat dissipation
- Rated for avalanche energy handling capabilities
Applications
- Notebook point-of-load power regulation
- Synchronous buck converters in networking equipment
- Point-of-load modules in telecom systems
- Power stages in computing hardware
Procurement Notes
Verify the specific suffix and tape-and-reel quantity against the manufacturer's latest ordering information. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the package dimensions match your PCB footprint design constraints before finalizing procurement.
Selection Notes
Select this component when low gate charge and fast switching speeds are critical for efficiency. The 5V gate drive optimization makes it suitable for modern logic-level drivers. Consider the thermal resistance and package size relative to your board's copper area for adequate heat sinking during high-current operation.
Part Context
This part belongs to Texas Instruments' NexFET series, which focuses on enhancing power density and efficiency in DC-DC conversion. The CSD17312Q5 specifically targets applications requiring robust performance in compact form factors, leveraging silicon technology to deliver high current capability within a small surface-mount footprint.
Replacement Considerations
Check datasheets for other CSD173xxQ5 variants or similar 30V N-Channel MOSFETs from TI. Verify that any substitute matches the Rds(on) at Vgs=4.5V and Vgs=8V, as well as the Qg specifications, to ensure equivalent switching performance.
