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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.7 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD17313Q2Q1 is an N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power conversion. It features a 60V drain-source voltage rating and a continuous drain current of 45A. The device exhibits a low on-resistance of 10mΩ at VGS=10V, minimizing conduction losses in synchronous buck applications. Packaged in a compact 2mm x 2mm QFN with exposed pad, it supports switching frequencies up to 1MHz. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55°C to +150°C, ensuring reliability in automotive environments.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q101 standards for enhanced reliability
- Ultra-low on-resistance minimizes conduction losses and thermal generation
- Compact 2mm x 2mm QFN package facilitates high-density PCB layout
- Optimized gate charge characteristics enable efficient operation at high switching frequencies
Applications
- Automotive DC-DC converters
- Point-of-load (POL) regulation modules
- Synchronous buck converter designs
Procurement Notes
Verify the specific suffix 'Q1' confirms AEC-Q101 automotive qualification status. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Confirm that the component meets the specific temperature grade requirements for your target application environment before finalizing procurement.
Selection Notes
Select this component when designing automotive power stages requiring high current density and low thermal resistance. The 60V rating provides sufficient headroom for 12V automotive systems. Consider the 10mΩ Rds(on) for efficiency optimization in loads exceeding 20A. The small footprint allows for tighter spacing around other components compared to larger packages.
Part Context
This device belongs to the NexFET family of power MOSFETs, engineered for superior performance in power management applications. The series emphasizes low loss and fast switching capabilities. Integration into automotive electronics requires adherence to strict reliability standards, which this qualified version addresses through rigorous testing protocols defined by industry specifications.
Replacement Considerations
Direct substitutes must match the 60V/45A/10mΩ electrical profile and 2x2mm QFN package. Verify pinout compatibility and thermal pad configuration. Check if alternative parts hold equivalent AEC-Q101 certification for direct replacement in validated automotive designs.
