ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 5A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.7 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 17W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
Download product information
Overview
The CSD17313Q2Q1T is a single-channel N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes a 2mm x 2mm SON package and features silicon technology with an enhancement mode channel configuration. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30V, a continuous drain current (Id) of 45A, and a maximum on-resistance (Rds(on)) of 6.7mΩ at a junction temperature of 125°C. The device operates within a temperature range of -55°C to +150°C, supports a gate-source voltage of ±8V, and exhibits a typical gate charge of 13nC.
Feature Summary
- Integrates high-performance N-channel MOSFET technology for efficient power switching
- Optimized low on-resistance characteristics to minimize conduction losses in high-current applications
- Designed for compact form factors utilizing ultra-thin surface-mount packaging
Applications
- High-density DC-DC converter modules
- Portable electronic device power management systems
- Automotive infotainment and control unit power supplies
Procurement Notes
Verify the specific suffix Q1T against official Texas Instruments documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure that the ordering part number matches the exact voltage and current ratings required for the target circuit design before finalizing procurement orders.
Selection Notes
Select this component when designing synchronous buck converters requiring high efficiency in minimal PCB area. The low thermal resistance and small footprint make it suitable for space-constrained portable electronics. Evaluate the trade-off between switching speed and electromagnetic interference based on the specific gate drive capabilities available in the system architecture.
Part Context
This component belongs to the NexFET family from Texas Instruments, which focuses on advanced silicon MOSFET technologies. The series is engineered to provide superior power density compared to traditional discrete solutions. It serves as a critical building block for modern power stages where size reduction and thermal performance are primary design constraints.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Generic replacements may not match the specific Rds(on) or thermal characteristics required for high-efficiency designs.
