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Product Detailed Parameters
- Description：MOSFET N-CH 30V 2.3A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：64mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.7 nC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：347 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17382F4 is a single N-channel enhancement-mode MOSFET from the NexFET family, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 2 A. Its on-resistance is specified at 150 milliohms. The gate-source voltage range spans from -8 V to 8 V, with a threshold voltage of 650 mV. Gate charge is 1.04 nC. Operating temperatures range from -55 °C to +150 °C junction temperature, with power dissipation rated at 500 mW.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Ultra-low gate charge enabling fast switching speeds and reduced drive losses
- Enhanced thermal performance through optimized package design
Applications
- DC-DC converter modules
- Power management integrated circuits output stages
- Low-voltage synchronous rectification
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS directives if required by the target assembly process. Cross-reference the package marking code with the mechanical drawing to prevent counterfeit substitution during incoming inspection.
Selection Notes
Select this component when a compact solution is required for low-voltage power conversion. The combination of low on-resistance and small footprint makes it suitable for space-constrained designs. Evaluate the thermal requirements against the 500 mW dissipation rating to determine if additional heatsinking or PCB copper area is necessary for the intended load conditions.
Part Context
This part belongs to the CSD1738x series of NexFET power MOSFETs. These devices are engineered to replace larger packages while maintaining comparable electrical performance. The series targets portable electronics and industrial control systems where efficiency and size are critical constraints.
Replacement Considerations
Consult the official replacement guide for verified equivalents. Do not assume pin-compatible substitutes without verifying absolute maximum ratings and thermal characteristics.
