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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：121mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.04 nC @ 8 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：195 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17484F4T is a single N-channel enhancement mode power MOSFET from the FemtoFET series, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package with three pins. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 3 A. Key electrical parameters include a maximum on-resistance of 128 mΩ at 4.5 V gate drive, a threshold voltage of 650 mV, and a total gate charge of 920 pC. It operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 500 mW.
Feature Summary
- Integrated body diode for synchronous rectification applications
- Ultra-low profile PICOSTAR-3 package design
- Enhanced switching performance characteristics
Applications
- DC-DC converter output stages
- Low voltage load switch circuits
- Power management modules
Procurement Notes
Verify the specific suffix 'T' indicates tape and reel packaging configuration when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the ordering part number matches the exact pinout and thermal requirements of the target PCB layout. Cross-reference datasheet revisions to validate parameter consistency.
Selection Notes
Select this component for designs requiring compact form factors due to the PICOSTAR-3 footprint. Evaluate the 128 mΩ on-resistance against thermal constraints for the expected 3 A load current. Consider the 920 pC gate charge for driver capability requirements in high-frequency switching scenarios. Verify compatibility with standard logic-level gate drive voltages.
Part Context
This component belongs to the CSD17484F4 family within the FemtoFET product line. It represents a specialized discrete semiconductor solution designed for efficient power conversion. The series emphasizes miniaturization and electrical efficiency for modern portable and industrial electronics.
Replacement Considerations
Consult official substitution guides for verified alternatives. Direct replacements must match the 30 V rating, 3 A current capacity, and PICOSTAR-3 package dimensions.
