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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A 8SON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1370 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
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Overview
The CSD17551Q3A is a 30-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features an enhancement mode single-channel configuration housed in a VSONP-8 surface-mount package. The device supports a maximum drain-source voltage of 30 V and operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a gate threshold voltage ranging from 1.1 V to 1.9 V at 250 µA, a typical gate charge of 9 nC at 4.5 V, and a maximum power dissipation of 2.6 W.
Feature Summary
- NexFET technology provides enhanced switching performance and low on-resistance for efficient power management.
- VSONP-8 package offers a compact footprint suitable for space-constrained printed circuit board layouts.
- Enhanced mode operation ensures reliable switching control with defined threshold voltage parameters.
Applications
- DC-DC converter circuits requiring high efficiency and fast switching speeds
- Power management modules in portable electronic devices
- Load switching applications in industrial control systems
Procurement Notes
Verify the specific suffix 'Q3A' against the manufacturer's official datasheet to confirm pinout and thermal specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm that the VSONP-8 package dimensions match your PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a 30-V rating is sufficient for the application voltage headroom. Consider the 2.6 W power dissipation limit and ensure adequate thermal relief on the PCB. Compare the 9 nC gate charge against driver capabilities to optimize switching speed. Evaluate the VSONP-8 package size relative to available board space compared to larger SOIC or DPAK alternatives.
Part Context
This device belongs to the NexFET Power MOSFET family from Texas Instruments, designed for general-purpose power switching. The Q3A suffix typically denotes a specific tape-and-reel packaging option or variant within the broader CSD1755x series. These components are engineered to replace older silicon technologies in modern low-voltage, high-current applications.
Replacement Considerations
Compatible substitutes within the same family include CSD17552Q3A and CSD17578Q3A. Verify that alternative part numbers maintain identical pin configurations and thermal resistance values. Check datasheets for any differences in Rds(on) or gate charge that might affect circuit timing or efficiency.
