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Product Detailed Parameters
- Description：MOSFET N-CH 30V 23.5A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：23.5A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3252 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17553Q5A is an N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a maximum drain-source voltage of 30 V and a continuous drain current of 48 A at case temperature. The device offers a typical on-resistance of 6.2 mΩ at a gate-source voltage of 10 V. It utilizes an 8-pin VSONP package with dimensions of 3.25 mm in length, 3.1 mm in width, and 0.9 mm in height. The component operates within a junction temperature range of -55 °C to +150 °C and has a maximum power dissipation of 2.6 W.
Feature Summary
- NexFET technology provides low on-resistance for high efficiency
- Enhanced mode operation for standard logic control
- Lead-free packaging compliant with RoHS standards
Applications
- DC-DC converter output stages
- Load switching applications
- Power management circuits
Procurement Notes
Verify the specific suffix 'Q5A' against official Texas Instruments documentation to confirm package type and tape-and-reel specifications. Ensure that the requested quantity matches the manufacturer's standard reel size or cut-tape availability. Confirm compliance requirements such as RoHS and REACH status directly from the latest datasheet before finalizing procurement orders.
Selection Notes
Select this component when a 30 V rating and approximately 6.2 mΩ on-resistance are required in an 8-pin VSONP package. Consider the thermal performance limits defined by the 2.6 W power dissipation rating. Evaluate the gate charge characteristics relative to the driving circuit capabilities to ensure adequate switching speeds without excessive drive losses.
Part Context
This part belongs to the Texas Instruments NexFET family of power MOSFETs. These devices are designed for general-purpose power switching applications requiring high current density in small footprints. The CSD17553Q5A shares design principles with other members of the CSD17xxx series, focusing on minimizing conduction losses while maintaining robust avalanche ratings.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains the same voltage, current, and resistance ratings along with compatible pinout configurations.
