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Product Detailed Parameters
- Description：MOSFET N-CH 30V 60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4420 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 108W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD17575Q3T is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VDS rating of 30V and a continuous drain current (ID) of 182A. The device exhibits a maximum RDS(on) of 2.3 mΩ at VGS = 10V. Gate threshold voltage (VGS(th)) is 1.1V. Total gate charge (Qg) is 23 nC. Operating temperature range spans from -55°C to +150°C junction temperature. Power dissipation is rated at 108W. Package type is VSON-CLIP-8.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- High current capability for demanding applications
- Robust thermal performance with wide operating temperature range
Applications
- Point-of-load (POL) converters
- DC-DC conversion stages
- Power management modules
- Industrial motor control systems
Procurement Notes
Verify the exact suffix 'T' indicates tape and reel packaging configuration as per manufacturer documentation. Confirm RoHS compliance status through official datasheet specifications. Ensure ordering part number matches the specific package variant required for PCB layout compatibility. Cross-reference with Texas Instruments official component database for latest lifecycle status.
Selection Notes
Select based on required current handling capacity and voltage ratings for the specific circuit topology. Consider thermal management requirements given the 108W power dissipation rating. Evaluate gate drive compatibility with the 23 nC gate charge specification. Verify package dimensions match the target footprint design constraints.
Part Context
Part of the NexFET family of power MOSFETs designed for high-efficiency switching applications. Utilizes advanced silicon technology to minimize losses. Manufactured by Texas Instruments using standard semiconductor processes. Available in surface-mount packages for automated assembly.
Replacement Considerations
Consult official substitution guides for electrically equivalent alternatives. Verify pinout compatibility and thermal characteristics before replacement. Check for any functional differences in gate charge or threshold voltage that may impact driver design.
