ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2310 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 53W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD17577Q5AT is an N-channel enhancement-mode MOSFET from the NexFET family, manufactured by Texas Instruments. It features a maximum drain-source voltage of 30 V and a continuous drain current of 22 A at 25°C. The device utilizes an 8-pin VSONP (5x6 mm) surface-mount package with a maximum height of 0.76 mm. Key electrical parameters include a maximum on-resistance of 5.8 mΩ at 10 V gate drive and a typical gate charge of 13 nC at 4.5 V. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Low on-resistance optimized for minimal conduction losses
- Enhanced thermal performance via exposed pad PowerTDFN packaging
Applications
- DC-DC converter output stages
- Synchronous rectification in point-of-load modules
- High-current load switching circuits
Procurement Notes
Verify the complete part number including the AT suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements against specific manufacturing standards. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component when a 30 V rating and approximately 22 A continuous current capability are required in a compact footprint. The low gate charge supports efficient driver design, while the VSONP package facilitates automated surface-mount assembly. Ensure thermal management strategies align with the specified power dissipation limits under intended operating conditions.
Part Context
This device belongs to the CSD17xxx series of NexFET MOSFETs, which are engineered for low-voltage, high-current applications. The Q5A/Q5AT suffix indicates specific packaging and reel configurations within the Texas Instruments discrete semiconductor portfolio. These components are commonly integrated into power management solutions requiring high efficiency and small board space.
Replacement Considerations
Consult official substitution guides for equivalent NexFET devices with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing existing designs.
