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The CSD17578Q3A is a 30V N-channel NexFET power MOSFET in a VSONP-8 package. It features a continuous drain current of 20A at 25°C and a maximum on-resistance of 9.4mΩ. The device has a gate-source threshold voltage of 1.5V to 1.9V, a total gate charge of 7.9nC, and a power dissipation rating of 3.2W at 25°C ambient temperature. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix (e.g., 'T' for tape and reel) against the required packaging format. Confirm RoHS compliance status through official documentation. Ensure the VSONP-8 footprint matches the design layout. Check for any specific handling requirements related to moisture sensitivity level 1.
Select this component for low-voltage, high-current applications requiring efficient switching. The low gate charge supports fast transition times. Evaluate thermal management needs based on the 3.2W dissipation limit. Compare on-resistance values against system efficiency targets.
This part belongs to Texas Instruments' NexFET family of power MOSFETs. These devices are designed for high-efficiency power management solutions. The VSONP-8 package provides a compact form factor suitable for space-constrained PCB layouts.
Check for direct substitutes within the same NexFET series with compatible pinouts and electrical ratings. Verify that alternative parts meet the same avalanche rating and package dimensions.