CSD17578Q3AT

$1.50

Description：MOSFET N-CH 30V 20A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d250fce6fe20 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 20A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1590 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 37W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (3x3.3)
Package / Case：8-PowerVDFN

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CSD17578Q3AT

Overview

The CSD17578Q3AT is a NexFET N-channel enhancement mode MOSFET in an 8-pin VSONP package. It features a 30V drain-source voltage rating and supports continuous currents up to 20A. The device exhibits a low on-resistance of 8.2mΩ with a gate charge of 7.9nC at 4.5V. It operates within a temperature range of -55°C to +150°C, offering high thermal efficiency for power switching applications.

Feature Summary

NexFET technology enables low on-resistance and fast switching speeds
Built-in avalanche capability provides robustness against transient energy events
Low gate charge facilitates efficient drive requirements

Applications

DC-DC converter output stages
Synchronous rectification circuits
Power management modules

Procurement Notes

Verify the specific suffix 'AT' matches the required reel or cut tape packaging configuration. Confirm RoHS compliance status through official documentation before integration. Ensure the ordering part number aligns exactly with the datasheet specifications to avoid functional discrepancies.

Selection Notes

Select this component for designs requiring a balance between low conduction losses and manageable gate drive complexity. The 30V rating suits standard bus voltages. Evaluate thermal performance based on the specified power dissipation limits and ensure adequate PCB copper area for heat sinking.

Part Context

This device belongs to Texas Instruments' NexFET family, designed for high-efficiency power conversion. The VSONP package offers a compact footprint suitable for space-constrained layouts while maintaining reliable surface-mount assembly standards.