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Product Detailed Parameters
- Description：MOSFET N-CH 30V 25A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17579Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30V drain-source voltage rating and a continuous drain current of 20A at 25°C. The device offers a maximum on-resistance of 6.3mΩ at 10V gate drive. It utilizes an 8-VSONP package with dimensions of 5x6mm. The component supports a junction temperature range from -55°C to +150°C and includes avalanche-rated capabilities for robust operation in demanding power applications.
Feature Summary
- NexFET technology provides low on-resistance for high efficiency
- Enhanced avalanche ruggedness for improved reliability
- Surface-mount VSONP-8 package for compact board space
Applications
- DC-DC converter modules
- Power distribution networks
- Load switching circuits
Procurement Notes
Verify the specific suffix 'AT' against the official Texas Instruments datasheet to confirm tape and reel specifications. Ensure the ordering part number matches the required packaging format. Confirm RoHS compliance status through the manufacturer's documentation before finalizing procurement decisions.
Selection Notes
Select this component when a 30V N-channel MOSFET with low Rds(on) is required. The 8-VSONP package suits space-constrained designs. Verify that the 20A continuous current rating meets the thermal requirements of the target application environment.
Part Context
This part belongs to the CSD17579Q5 series of NexFET power MOSFETs. These devices are designed for synchronous rectification and general power switching applications. The series emphasizes low gate charge and fast switching speeds to minimize power losses in modern power supply architectures.
Replacement Considerations
Consult the Texas Instruments product selection guide for direct replacements within the CSD17579 family. Verify pin compatibility and electrical parameters such as Rds(on) and Vgs(th) before substituting with other manufacturers' components.
