ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 21A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3640 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
Download product information
Overview
The CSD17581Q3A is a 30-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a maximum continuous drain current of 60 A at case temperature and a typical on-resistance of 3.8 mΩ at 10 V gate drive. The device utilizes an 8-VSONP package with dimensions of 3x3.3 mm. Key electrical characteristics include a gate threshold voltage of 1.7 V at 250 µA, a total gate charge of 54 nC at 10 V, and an input capacitance of 3640 pF at 15 V. It supports a junction temperature range from -55°C to 150°C.
Feature Summary
- NexFET technology for optimized power efficiency
- Integrated body diode for synchronous rectification
- Avalanche rated capability for robust operation
- Lead-free and RoHS compliant construction
Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Synchronous rectification in point-of-load applications
Procurement Notes
Verify the specific suffix designation when ordering, as variations such as 'T' or '.B' may indicate different tape-and-reel packaging configurations or quality certifications. Confirm that the component meets the required automotive or industrial standards if applicable to the target system design. Ensure compatibility with the intended thermal management solution given the small footprint.
Selection Notes
Select this component for applications requiring low conduction losses in a compact surface-mount form factor. The low gate charge facilitates high-frequency switching operations. Evaluate the thermal resistance parameters against the expected power dissipation to ensure reliable operation within the specified junction temperature limits without excessive heatsinking.
Part Context
This part belongs to the CSD17581 series of NexFET Power MOSFETs from Texas Instruments. These devices are designed to replace traditional discrete solutions in space-constrained power designs. The series offers improved figure-of-merit values compared to previous generations, supporting trends toward miniaturization in consumer and industrial electronics.
Replacement Considerations
Compatible substitutes include CSD17581Q3AT and CSD17581Q3A.B. Verify pinout compatibility and electrical parameter equivalence before substitution.
