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Product Detailed Parameters
- Description：MOSFET N-CH 40V 26A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：26A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5070 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
Texas Instruments CSD18502Q5B is a single N-channel NexFET power MOSFET in an 8-VSON-CLIP package. It features a 40V drain-source voltage rating and a continuous drain current of 26A at ambient temperature, or 100A at case temperature. The device exhibits a maximum on-resistance of 2.3 milliohms at 10V gate drive. Thermal performance includes 3.2W dissipation at ambient and 156W at case conditions. Operating junction temperature ranges from -55°C to +150°C with a maximum gate-source voltage of ±20V.
Feature Summary
- NexFET technology enables low on-resistance for efficient power switching
- Clip-style thermal pad design facilitates direct heat transfer to PCB copper planes
- Enhancement-mode operation ensures reliable turn-on characteristics
Applications
- DC-DC converter output stages
- Low-side switching applications
- Power management modules
Procurement Notes
Verify the specific suffix against official Texas Instruments documentation to confirm exact electrical tolerances and packaging specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the manufacturing process.
Selection Notes
Select this component when a compact surface-mount solution is required for 40V systems. Evaluate the trade-off between the 2.3 milliohm resistance and the 8-VSON-CLIP footprint against alternative packages based on available board space and thermal dissipation constraints.
Part Context
The CSD18502Q5B belongs to the NexFET family of silicon-based power transistors. This series focuses on optimizing the figure of merit for high-efficiency power conversion within small form factors suitable for modern electronic equipment designs.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout configuration and meets or exceeds the original voltage and current ratings.
