CSD18510KCS

$1.73

Description：MOSFET N-CH 40V 200A TO220-3
Series：NexFET™
Mfr：Texas Instruments
Package：Tube

SKU:691858480f76 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 200A TO220-3
Series：NexFET™
Mfr：Texas Instruments
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11400 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：250W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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CSD18510KCS

Overview

The CSD18510KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a TO-220-3 through-hole package with the case connected to the drain. The device features a 40V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 100A. Its maximum on-resistance (Rds On) is 2 milliohms, with a gate threshold voltage (Vgs th) of 1.4V. The gate charge (Qg) is 153nC, and it operates within a temperature range of -55°C to +175°C. Power dissipation is rated at 250W.

Feature Summary

NexFET technology for enhanced power efficiency
Avalanche rated capability for robust operation
Low on-resistance for reduced conduction losses

Applications

DC-DC converters
Power switching applications
Motor control circuits

Procurement Notes

Verify the specific datasheet version and ordering information directly from Texas Instruments or authorized distributors. Confirm that the TO-220-3 package and lead-free RoHS compliance meet your assembly requirements. Ensure thermal management solutions are adequate for the specified 250W power dissipation rating under your operating conditions.

Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required in a through-hole package. The 40V rating suits low-side switching applications where minimal conduction loss is critical. Consider the TO-220-3 form factor for ease of mounting on heatsinks compared to surface-mount alternatives.

Part Context

This part belongs to the CSD18510 series of NexFET power MOSFETs from Texas Instruments. These devices are designed for general-purpose power switching applications requiring high efficiency and reliability. The series leverages advanced silicon planar technology to achieve low on-resistance and fast switching speeds.