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Product Detailed Parameters
- Description：MOSFET N-CH 40V 194A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：194A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5940 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：188W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The CSD18511KTT is a 40-V N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a D2PAK package with a maximum continuous drain current of 194 A and a typical on-resistance of 2.6 mΩ. The device supports a gate-source voltage range of ±20 V, with a threshold voltage of 1.5 V and total gate charge of 64 nC. It operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 188 W.
Feature Summary
- NexFET technology for enhanced efficiency
- Low on-resistance for reduced conduction losses
- Avalanche rated capability
- Single N-Channel configuration
Applications
- DC-DC converters
- Power switching applications
- Motor control circuits
Procurement Notes
Verify the specific suffix KTT against the official Texas Instruments datasheet SLPS548A to confirm the D2PAK packaging and electrical characteristics. Ensure compatibility with thermal management requirements given the 188 W power dissipation rating. Cross-reference ordering information directly from TI documentation to avoid discrepancies in part identification.
Selection Notes
Select this component for high-current applications requiring low Rds(on) and robust avalanche performance. The D2PAK package suits surface-mount designs needing efficient heat dissipation. Compare specifications against alternative NexFET devices if different voltage ratings or package types are required for the specific circuit topology.
Part Context
This part belongs to the CSD18511 series of NexFET power MOSFETs. It shares core semiconductor technology with variants like CSD18511KCS (TO-220) and CSD18511Q5AT (automotive grade), differing primarily in packaging and qualification standards. The KTT suffix specifically denotes the D2PAK form factor.
Replacement Considerations
Direct substitutes include other CSD18511 variants such as CSD18511KCS for through-hole applications. Verify pinout compatibility and thermal resistance differences when replacing with similar NexFET devices from Texas Instruments or other manufacturers.
