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Product Detailed Parameters
- Description：MOSFET N-CH 40V 159A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：159A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 24A, 4.5V
- Vgs(th) (Max) @ Id：2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5850 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18511Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VSONP-8 surface-mount package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 75A and achieves a maximum on-resistance of 6.6 milliohms at room temperature. Gate-source voltage limits are defined between -20V and +20V, with a typical gate charge of 16nC. Thermal performance includes a power dissipation rating of 77W and an operating temperature range from -55°C to +150°C.
Feature Summary
- Utilizes NexFET technology for enhanced switching efficiency and low conduction losses.
- Designed for high-current applications requiring minimal thermal resistance in compact footprints.
- Features robust gate oxide reliability and optimized body diode characteristics.
Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Synchronous rectification stages
Procurement Notes
Verify the complete part number including the suffix to confirm specific tape-and-reel quantities and packaging variants. Confirm RoHS compliance status through official datasheets prior to integration. Ensure ESD handling protocols are followed during assembly due to sensitive gate structures. Cross-reference manufacturer documentation for updated lead times and environmental declarations.
Selection Notes
Select this component when designing systems requiring low Rds(on) within a small VSONP-8 footprint. Evaluate thermal constraints based on the 77W dissipation rating under specified mounting conditions. Compare gate charge requirements against driver capabilities to optimize switching speeds. Consider the 40V voltage rating for margin in 12V or 24V bus architectures.
Part Context
This device belongs to the CSD185xxQ5 series of NexFET power MOSFETs. The series focuses on reducing total gate charge and on-resistance for improved efficiency in point-of-load applications. The Q5 designation indicates the specific package type and pin configuration used in modern high-density PCB layouts.
Replacement Considerations
Consult the official Texas Instruments selection guide for direct replacements within the CSD185xxQ5 family. Verify pin compatibility and electrical parameters before substituting with other manufacturers' equivalents. No public substitute part numbers are confirmed in available documentation.
