CSD18512Q5BT

$2.23

Description：MOSFET N-CH 40V 211A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:155fdbb1ae28 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 211A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：211A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7120 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：139W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (5x6)
Package / Case：8-PowerTDFN

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CSD18512Q5BT

Overview

The CSD18512Q5BT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 40 V drain-source voltage rating and operates with an enhancement mode channel configuration. The device utilizes silicon technology and is housed in an 8-VSON-CLIP package for surface mount installation. Key electrical parameters include a continuous drain current of 100 A, a maximum gate-source voltage of ±20 V, and a typical on-resistance of 1.3 mΩ at 10 V gate drive. The component supports a junction temperature range from -55°C to +150°C.

Feature Summary

NexFET technology designed for high-efficiency power switching applications
Low on-resistance characteristics optimized for minimal conduction losses
Robust thermal performance enabled by the VSON-Clip package design

Applications

DC-DC converter circuits
Power management modules
Motor control systems

Procurement Notes

Verify the specific suffix 'BT' against the manufacturer datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact voltage and current ratings required for the target circuit design. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.

Selection Notes

Select this component when a low-voltage, high-current N-channel switch is required in a compact surface-mount footprint. Evaluate the thermal dissipation capabilities relative to the expected load current and ambient operating conditions. Confirm that the gate drive voltage aligns with the specified threshold and on-resistance test conditions for optimal performance.

Part Context

This part belongs to the CSD185xx series of NexFET power MOSFETs from Texas Instruments. The series focuses on delivering high performance in small packages for modern power electronics. The Q5B designation typically indicates specific process and packaging variations within the broader product family.