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Product Detailed Parameters
- Description：MOSFET N-CH 40V 89A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2683 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18514Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds of 40 V and an Rds(on) of 6.6 mOhms at Vgs = 10 V. The device supports a continuous drain current (Id) of 75 A and a pulsed drain current of 300 A. Gate charge (Qg) is typically 16 nC at Vgs = 10 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a maximum power dissipation of 77 W in a VSONP-8 package.
Feature Summary
- Utilizes NexFET technology for enhanced switching performance and low conduction losses.
- Designed for surface-mount applications with a compact VSONP-8 footprint.
- Features low gate charge to facilitate efficient drive requirements.
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Power distribution modules
Procurement Notes
Verify the specific suffix 'AT' corresponds to the required tape-and-reel packaging configuration. Confirm RoHS compliance status through the official datasheet or manufacturer documentation prior to integration. Ensure the ordering part number matches the exact electrical characteristics and package type specified in the design requirements.
Selection Notes
Select this component when a 40V rating is sufficient and low on-resistance is critical for efficiency. Compare Qg and Rds(on) against alternative packages if thermal constraints differ. Validate that the VSONP-8 thermal resistance meets the system's heat dissipation needs under expected load conditions.
Part Context
This part belongs to the CSD185xxQ5A series of NexFET power MOSFETs from Texas Instruments. These devices are engineered for high-efficiency power management solutions, offering a balance between voltage handling capability and low on-state resistance in a small form factor suitable for modern electronic designs.
Replacement Considerations
Consult the official Texas Instruments selection guide for direct pin-compatible alternatives within the CSD185xxQ5A family. Verify that any substitute maintains identical Vds, Rds(on), and package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB layout.
