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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4680 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD18532KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a TO-220-3 through-hole package with a drain-connected tab. Key electrical parameters include a 60V drain-source breakdown voltage (Vds), a continuous drain current (Id) of 169A, and a maximum on-resistance (Rds(on)) of 4.2mΩ at Vgs=10V. The device operates within a temperature range of -55°C to +175°C, supports a gate-source voltage of ±20V, and has a total gate charge (Qg) of 44nC. Power dissipation is rated at 250W.
Feature Summary
- NexFET technology designed for low conduction losses
- Enhancement mode operation with high forward transconductance
- Through-hole mounting for robust thermal management
Applications
- Synchronous rectification in isolated flyback converters
- Low-side switching in DC-DC buck converters
- General-purpose power switching applications
Procurement Notes
Verify the specific suffix 'KCS' against the manufacturer's official datasheet to confirm the exact pinout and packaging configuration. Ensure that the required thermal interface material and mounting hardware are compatible with the TO-220-3 package dimensions. Confirm RoHS compliance status directly from the latest component documentation before finalizing procurement specifications.
Selection Notes
Select this component when a low on-resistance is critical for minimizing conduction losses in high-current applications. The 60V rating provides sufficient headroom for standard 48V systems. Consider the 169A current capability and 250W power dissipation rating to ensure adequate thermal performance without excessive heatsinking requirements compared to lower-rated alternatives.
Part Context
This part belongs to the CSD1853x series of NexFET power MOSFETs. These devices utilize silicon technology optimized for high efficiency. The series includes variants with different Rds(on) and current ratings, all sharing similar package footprints and switching characteristics suitable for modern power supply designs.
Replacement Considerations
Direct substitutes may include other 60V N-channel MOSFETs in TO-220 packages with comparable Rds(on) and Id ratings. Verify pin compatibility and thermal resistance values. Cross-reference with TI's own CSD18534KCS or CSD18536KCS if slightly higher resistance is acceptable for cost reduction.
