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Product Detailed Parameters
- Description：MOSFET N-CH 60V 22A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5340 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18532NQ5B is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 60-V drain-source voltage rating and a maximum continuous drain current of 100 A at case temperature, or 22 A at ambient temperature. The device exhibits a typical on-resistance of 3.4 mΩ. It is housed in an 8-pin VSON-CLIP package with dimensions of 5 mm x 6 mm. The component supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Utilizes NexFET technology for enhanced power efficiency
- Designed for surface mount applications via VSON-CLIP packaging
- Provides high current handling capability for power switching
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific ordering suffix to ensure correct tape and reel configuration. Confirm that the received components match the manufacturer's marking code and date code requirements. Check for physical damage to the exposed thermal pad which is critical for heat dissipation in this package type. Ensure storage conditions comply with moisture sensitivity level ratings before soldering.
Selection Notes
Select this component when a low on-resistance is required for a 60-V system. The VSON-CLIP package offers superior thermal performance compared to standard SON packages. Consider the gate charge characteristics for driving requirements in high-frequency switching applications. Evaluate the thermal resistance values against the expected power dissipation in the target design.
Part Context
This part belongs to the CSD18532 series of NexFET power MOSFETs. It is designed to replace older generation silicon MOSFETs in compact power designs. The family focuses on reducing conduction losses while maintaining robust avalanche capabilities. It serves as a direct pin-compatible option for various 60-V single N-channel applications.
Replacement Considerations
Check datasheets for alternative parts like CSD18537NQ5AT regarding voltage and current ratings. Verify package compatibility and thermal pad alignment for direct substitution. Compare gate charge and threshold voltage specifications to ensure driver compatibility.
