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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5340 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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FAQ
Is the CSD18532NQ5BT an N-channel or P-channel MOSFET?
The CSD18532NQ5BT is an N-channel power MOSFET.
What package type does the CSD18532NQ5BT use?
It utilizes a VSON-Clip-8 surface-mount package.
