ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 45A/100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：45A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1880 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：107W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The CSD18534KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 100 A. Its maximum on-resistance (Rds On) is 10.2 mOhms, with a gate charge (Qg) of 19 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 98 W.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- Through-hole mounting for robust mechanical stability
Applications
- Synchronous rectification in power supplies
- DC-DC converter circuits
- Power management systems
Procurement Notes
Verify the specific datasheet version and RoHS compliance status directly with Texas Instruments or authorized distributors before procurement. Ensure that the TO-220-3 package dimensions match your PCB layout requirements. Confirm thermal management capabilities align with your system's heat dissipation design to maintain safe operating temperatures under load conditions.
Selection Notes
Select this component when a through-hole N-channel MOSFET with 60V capability and high current handling is required. Compare its 10.2 mOhm on-resistance against alternative packages if space constraints exist. Consider the 100A continuous current rating relative to your peak load demands and ensure adequate heatsinking is provided for the 98W power dissipation specification.
Part Context
This part belongs to the CSD18534 series of NexFET power MOSFETs from Texas Instruments. These devices are designed for general-purpose power switching applications requiring low on-resistance and fast switching speeds. The KCS suffix indicates the specific TO-220-3 through-hole packaging configuration.
Replacement Considerations
Consult official Texas Instruments documentation for verified cross-reference part numbers. Do not substitute based solely on electrical parameters without confirming pinout compatibility and thermal characteristics.
