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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6620 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD18535KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 60 V drain-source voltage rating and a continuous drain current of 279 A. The device exhibits a maximum on-resistance of 2 mΩ at VGS = 10 V. It operates within a temperature range of -55 °C to +175 °C with a power dissipation capacity of 300 W. The component utilizes a TO-220-3 through-hole package and includes an integrated body diode.
Feature Summary
- NexFET technology enables low gate charge for efficient switching performance
- Avalanche-rated construction supports robust operation under transient conditions
- Integrated body diode provides fast reverse recovery characteristics
Applications
- Motor drive circuits
- DC-DC converter topologies
- Power switch implementations
- Solenoid drive systems
Procurement Notes
Verify the manufacturer designation as Texas Instruments when sourcing this component. Confirm the specific suffix KCS corresponds to the TO-220-3 through-hole package variant. Ensure compliance with RoHS directives and check REACH SVHC status prior to integration into final assemblies.
Selection Notes
Select this part for high-current applications requiring low conduction losses. The 2 mΩ on-resistance minimizes thermal generation compared to higher resistance alternatives. The TO-220-3 package facilitates effective heat dissipation for power levels up to 300 W in appropriate thermal environments.
Part Context
This component belongs to the NexFET family of silicon power MOSFETs from Texas Instruments. The series focuses on optimizing the balance between on-resistance and gate charge. The CSD18535KCS represents a through-hole solution within a portfolio that also includes surface-mount variants like the CSD18535KTTT.
Replacement Considerations
The CSD18535KTTT serves as a surface-mount alternative within the same electrical specification family. Verify pin compatibility and thermal management requirements when substituting between through-hole and SMD packages.
