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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A/279A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta), 279A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6620 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD18535KTTT is a single N-channel enhancement mode power MOSFET from the NexFET series by Texas Instruments. It utilizes silicon technology and is housed in a D2PAK (TO-263) surface-mount package with three pins. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 279 A at case temperature. Its maximum on-resistance is 2.9 mΩ, with a gate threshold voltage ranging from 1.4 V to 2.4 V. Total gate charge is typically 140 nC at 10 V. It supports a maximum power dissipation of 300 W and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- NexFET technology for optimized power performance
- Low on-resistance for high efficiency
- Enhanced thermal management capabilities
Applications
- DC-DC converters
- Power switching applications
- Motor control systems
Procurement Notes
Verify the specific suffix KTTT against official Texas Instruments documentation to confirm the tape and reel packaging configuration. Ensure compatibility with standard SMD reflow soldering profiles for TO-263 packages. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component for designs requiring high current handling in a compact surface-mount form factor. The 60 V rating suits low-voltage DC bus applications. Consider the thermal resistance characteristics of the D2PAK package when designing heat dissipation solutions. Verify that the gate drive circuitry can support the specified threshold voltage range for reliable switching.
Part Context
This part belongs to the CSD18535 family of NexFET power MOSFETs. These devices are engineered for high-efficiency power conversion. The KTTT suffix denotes a specific tape and reel packaging variant suitable for automated assembly processes. The family shares core electrical characteristics but may differ in packaging or minor parameter tolerances.
Replacement Considerations
Consult official Texas Instruments substitution guides for verified equivalents. Generic replacements must match the 60 V rating, N-channel configuration, and D2PAK footprint. Verify pinout compatibility and thermal performance metrics before implementation.
